FQD8P10TM
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Краткое описание:
P-Channel MOSFET, -100V, -6.6A, 530mR, DPAK, Surface Mount
Дополнительная информация
P-channel Power MOSFET, QFET® series, featuring a -100V drain-source breakdown voltage and a continuous drain current of 6.6A. This surface-mount component offers a maximum drain-source on-resistance of 530mΩ. Operating temperature range spans from -55°C to 150°C, with a maximum power dissipation of 2.5W. The DPAK package is supplied on a 2500-piece reel.
| RoHS | Compliant |
| Mount | Surface Mount |
| Width | 6.1mm |
| Height | 2.3mm |
| Length | 6.6mm |
| Series | QFET® |
| Weight | 0.26037g |
| Polarity | P-CHANNEL |
| Fall Time | 35ns |
| Lead Free | Lead Free |
| Packaging | Tape and Reel |
| Rds On Max | 530mR |
| Package/Case | DPAK |
| Current Rating | -6.6A |
| RoHS Compliant | Yes |
| DC Rated Voltage | -100V |
| Package Quantity | 1 |
| Input Capacitance | 470pF |
| Power Dissipation | 2.5W |
| Threshold Voltage | -4V |
| Number of Channels | 1 |
| Number of Elements | 1 |
| Turn-On Delay Time | 11ns |
| Radiation Hardening | No |
| Turn-Off Delay Time | 20ns |
| Reach SVHC Compliant | No |
| Element Configuration | Single |
| Max Power Dissipation | 2.5W |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Drain to Source Resistance | 530mR |
| Gate to Source Voltage (Vgs) | 30V |
| Continuous Drain Current (ID) | 6.6A |
| Drain to Source Voltage (Vdss) | 100V |
| Drain-source On Resistance-Max | 530mR |
| Drain to Source Breakdown Voltage | -100V |
