FQI50N06TU
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Краткое описание:
N-Channel Power MOSFET, 60V, 50A, 22mR, TO-262
Дополнительная информация
N-Channel Power MOSFET, featuring a 60V drain-to-source breakdown voltage and a continuous drain current of 50A. This component offers a low on-resistance of 22mΩ, ensuring efficient power transfer. Packaged in an I2PAK (TO-262-3) for through-hole mounting, it operates across a wide temperature range from -55°C to 175°C with a maximum power dissipation of 120W. The device exhibits fast switching characteristics with turn-on delay time of 15ns and fall time of 65ns.
| RoHS | Compliant |
| Mount | Through Hole |
| Series | QFET® |
| Weight | 2.084g |
| Polarity | N-CHANNEL |
| Fall Time | 65ns |
| Lead Free | Lead Free |
| Packaging | Rail/Tube |
| Rds On Max | 22mR |
| Package/Case | TO-262-3 |
| Current Rating | 50A |
| RoHS Compliant | Yes |
| DC Rated Voltage | 60V |
| Package Quantity | 50 |
| Input Capacitance | 1.54nF |
| Power Dissipation | 3.75W |
| Turn-On Delay Time | 15ns |
| Radiation Hardening | No |
| Turn-Off Delay Time | 60ns |
| Element Configuration | Single |
| Max Power Dissipation | 120W |
| Max Operating Temperature | 175°C |
| Min Operating Temperature | -55°C |
| Drain to Source Resistance | 22mR |
| Gate to Source Voltage (Vgs) | 25V |
| Continuous Drain Current (ID) | 50A |
| Drain to Source Voltage (Vdss) | 60V |
| Drain to Source Breakdown Voltage | 60V |
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