FQI7N60TU
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Краткое описание:
600V N-Channel Power MOSFET, 7.4A, 1Ω, TO-262
Дополнительная информация
N-channel Power MOSFET featuring 600V drain-source breakdown voltage and 7.4A continuous drain current. This single-element MOSFET offers a low 1Ω Rds On resistance and is housed in a TO-262-3 (I2PAK) package for through-hole mounting. Key switching characteristics include a 30ns turn-on delay and 60ns fall time, with a maximum power dissipation of 142W. Operating across a wide temperature range from -55°C to 150°C, this RoHS compliant component is supplied in a rail/tube package.
| RoHS | Compliant |
| Mount | Through Hole |
| Series | QFET® |
| Weight | 2.084g |
| Polarity | N-CHANNEL |
| Fall Time | 60ns |
| Lead Free | Lead Free |
| Packaging | Rail/Tube |
| Rds On Max | 1R |
| Package/Case | TO-262-3 |
| Current Rating | 7.4A |
| RoHS Compliant | Yes |
| DC Rated Voltage | 600V |
| Package Quantity | 50 |
| Input Capacitance | 1.43nF |
| Power Dissipation | 3.13W |
| Turn-On Delay Time | 30ns |
| Turn-Off Delay Time | 65ns |
| Element Configuration | Single |
| Max Power Dissipation | 142W |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Drain to Source Resistance | 1R |
| Gate to Source Voltage (Vgs) | 30V |
| Continuous Drain Current (ID) | 7.4A |
| Drain to Source Voltage (Vdss) | 600V |
| Drain to Source Breakdown Voltage | 600V |
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