FQI7N80TU
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Краткое описание:
800V N-Channel Power MOSFET, 6.6A, 1.5Ω, I2PAK
Дополнительная информация
N-Channel Power MOSFET, 800V Drain-Source Breakdown Voltage, 6.6A Continuous Drain Current, 1.5 Ohm Drain-Source Resistance. Features include a 1.85nF input capacitance, 55ns fall time, 35ns turn-on delay, and 95ns turn-off delay. This single-element transistor offers a maximum power dissipation of 167W and operates within a temperature range of -55°C to 150°C. Packaged in an I2PAK (TO-262-3) for through-hole mounting, it is RoHS compliant and lead-free.
| RoHS | Compliant |
| Mount | Through Hole |
| Height | 15.01mm |
| Series | QFET® |
| Weight | 2.084g |
| Polarity | N-CHANNEL |
| Fall Time | 55ns |
| Lead Free | Lead Free |
| Packaging | Rail/Tube |
| Rds On Max | 1.5R |
| Package/Case | TO-262-3 |
| Current Rating | 6.6A |
| RoHS Compliant | Yes |
| DC Rated Voltage | 800V |
| Package Quantity | 50 |
| Input Capacitance | 1.85nF |
| Power Dissipation | 3.13W |
| Number of Channels | 1 |
| Turn-On Delay Time | 35ns |
| Turn-Off Delay Time | 95ns |
| Element Configuration | Single |
| Max Power Dissipation | 167W |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Drain to Source Resistance | 1.5R |
| Gate to Source Voltage (Vgs) | 30V |
| Continuous Drain Current (ID) | 6.6A |
| Drain to Source Voltage (Vdss) | 800V |
| Drain to Source Breakdown Voltage | 800V |
