FQN1N50CTA
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Краткое описание:
N-Channel JFET, 500V, 380mA, 6 Ohm, TO-92
Дополнительная информация
N-Channel Power MOSFET featuring 500V drain-source breakdown voltage and 380mA continuous drain current. This single-element JFET offers a low 6 Ohm drain-source on-resistance and 4.6 Ohm drain-source resistance. Designed for through-hole mounting in a TO-92 package, it operates from -55°C to 150°C and includes a 4V threshold voltage. Key switching characteristics include 10ns turn-on delay and 10ns fall time.
| RoHS | Compliant |
| Mount | Through Hole |
| Width | 4.19mm |
| Height | 5.33mm |
| Length | 5.2mm |
| Series | QFET™ |
| Weight | 0.24g |
| Polarity | N-CHANNEL |
| Fall Time | 10ns |
| Lead Free | Lead Free |
| Packaging | Ammo Pack |
| Rds On Max | 173mR |
| Package/Case | TO-92 |
| RoHS Compliant | Yes |
| Package Quantity | 1 |
| Input Capacitance | 265pF |
| Power Dissipation | 890mW |
| Threshold Voltage | 4V |
| Number of Channels | 1 |
| Number of Elements | 1 |
| Turn-On Delay Time | 10ns |
| Radiation Hardening | No |
| Turn-Off Delay Time | 20ns |
| Reach SVHC Compliant | No |
| Element Configuration | Single |
| Max Power Dissipation | 236mW |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Drain to Source Resistance | 4.6R |
| Gate to Source Voltage (Vgs) | 30V |
| Continuous Drain Current (ID) | 380mA |
| Drain to Source Voltage (Vdss) | 500V |
| Drain-source On Resistance-Max | 6R |
| Drain to Source Breakdown Voltage | 500V |
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