FQP10N20C
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Краткое описание:
N-Channel Power MOSFET, 200V, 9.5A, 360mR, TO-220
Дополнительная информация
N-Channel Power MOSFET, QFET® series, features a 200V drain-source breakdown voltage and a continuous drain current of 9.5A. This through-hole component offers a maximum drain-source on-resistance of 360mΩ and a maximum power dissipation of 72W. Operating within a temperature range of -55°C to 150°C, it is housed in a TO-220AB package. Key switching characteristics include a turn-on delay time of 11ns and a fall time of 72ns.
| RoHS | Compliant |
| Mount | Through Hole |
| Width | 4.7mm |
| Height | 9.4mm |
| Length | 10.1mm |
| Series | QFET® |
| Weight | 1.8g |
| Polarity | N-CHANNEL |
| Fall Time | 72ns |
| Lead Free | Lead Free |
| Packaging | Rail/Tube |
| Rds On Max | 360mR |
| Package/Case | TO-220AB |
| Current Rating | 9.5A |
| RoHS Compliant | Yes |
| DC Rated Voltage | 200V |
| Package Quantity | 50 |
| Input Capacitance | 510pF |
| Power Dissipation | 72W |
| Turn-On Delay Time | 11ns |
| Radiation Hardening | No |
| Turn-Off Delay Time | 70ns |
| Element Configuration | Single |
| Max Power Dissipation | 72W |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Drain to Source Resistance | 360mR |
| Gate to Source Voltage (Vgs) | 30V |
| Continuous Drain Current (ID) | 9.5A |
| Drain to Source Voltage (Vdss) | 200V |
| Drain-source On Resistance-Max | 360mR |
| Drain to Source Breakdown Voltage | 200V |
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