FQP13N06L
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Краткое описание:
N-Channel Logic Level MOSFET, 60V, 13.6A, 110mR, TO-220
Дополнительная информация
N-Channel Power MOSFET, Logic Level, QFET® series, featuring a 60V drain-source breakdown voltage and a continuous drain current of 13.6A. This component offers a low drain-source on-resistance of 110mΩ. Designed for through-hole mounting in a TO-220AB package, it operates across a wide temperature range from -55°C to 175°C with a maximum power dissipation of 45W. Key switching characteristics include an 8ns turn-on delay and a 40ns fall time.
| RoHS | Compliant |
| Mount | Through Hole |
| Width | 4.7mm |
| Height | 9.4mm |
| Length | 10.1mm |
| Series | QFET® |
| Weight | 1.8g |
| Polarity | N-CHANNEL |
| Fall Time | 40ns |
| Lead Free | Lead Free |
| Packaging | Rail/Tube |
| Rds On Max | 110mR |
| Package/Case | TO-220AB |
| Current Rating | 13.6A |
| RoHS Compliant | Yes |
| DC Rated Voltage | 60V |
| Package Quantity | 50 |
| Input Capacitance | 350pF |
| Power Dissipation | 45W |
| Threshold Voltage | 2.5V |
| Number of Channels | 1 |
| Number of Elements | 1 |
| Turn-On Delay Time | 8ns |
| Turn-Off Delay Time | 20ns |
| Reach SVHC Compliant | No |
| Element Configuration | Single |
| Max Power Dissipation | 45W |
| Max Operating Temperature | 175°C |
| Min Operating Temperature | -55°C |
| Drain to Source Resistance | 110mR |
| Gate to Source Voltage (Vgs) | 20V |
| Continuous Drain Current (ID) | 13.6A |
| Drain to Source Voltage (Vdss) | 60V |
| Drain-source On Resistance-Max | 110mR |
| Drain to Source Breakdown Voltage | 60V |
