FQP15P12
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Краткое описание:
P-Channel MOSFET, -120V, -15A, 200mR, DPAK, Through Hole
Дополнительная информация
P-channel Power MOSFET, featuring a -120V drain-to-source breakdown voltage and a continuous drain current of 15A. This single-element transistor offers a low Rds On of 200mΩ and a maximum power dissipation of 100W. Designed for through-hole mounting in a TO-220 package, it boasts fast switching characteristics with a turn-on delay of 15ns and a fall time of 80ns. Operating across a wide temperature range from -55°C to 150°C, this RoHS-compliant component is ideal for demanding power applications.
| RoHS | Compliant |
| Mount | Through Hole |
| Series | QFET® |
| Weight | 1.8g |
| Polarity | P-CHANNEL |
| Fall Time | 80ns |
| Lead Free | Lead Free |
| Packaging | Rail/Tube |
| Rds On Max | 200mR |
| Package/Case | TO-220-3 |
| Current Rating | -15A |
| RoHS Compliant | Yes |
| DC Rated Voltage | -120V |
| Package Quantity | 50 |
| Input Capacitance | 1.1nF |
| Power Dissipation | 100W |
| Turn-On Delay Time | 15ns |
| Turn-Off Delay Time | 80ns |
| Element Configuration | Single |
| Max Power Dissipation | 100W |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Drain to Source Resistance | 200mR |
| Gate to Source Voltage (Vgs) | 30V |
| Continuous Drain Current (ID) | 15A |
| Drain to Source Voltage (Vdss) | 120V |
| Drain to Source Breakdown Voltage | -120V |
