FQP16N25
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Краткое описание:
N-Channel MOSFET, 250V, 16A, 230mR, TO-220
Дополнительная информация
N-Channel Power MOSFET, QFET® series, featuring a 250V drain-source breakdown voltage and a continuous drain current of 16A. This single-element transistor offers a low on-resistance of 230mΩ at a 10V gate-source voltage. Packaged in a TO-220AB through-hole mount, it supports a maximum power dissipation of 142W and operates within a temperature range of -55°C to 150°C. Ideal for power switching applications, it boasts fast switching times with turn-on delay at 17ns and fall time at 75ns.
| RoHS | Compliant |
| Mount | Through Hole |
| Width | 4.7mm |
| Height | 16.3mm |
| Length | 10.67mm |
| Series | QFET® |
| Weight | 1.8g |
| Polarity | N-CHANNEL |
| Fall Time | 75ns |
| Lead Free | Lead Free |
| Packaging | Rail/Tube |
| Rds On Max | 230mR |
| Package/Case | TO-220AB |
| Current Rating | 16A |
| RoHS Compliant | Yes |
| DC Rated Voltage | 250V |
| Package Quantity | 50 |
| Input Capacitance | 1.2nF |
| Power Dissipation | 50W |
| Number of Elements | 1 |
| Turn-On Delay Time | 17ns |
| Turn-Off Delay Time | 45ns |
| Element Configuration | Single |
| Max Power Dissipation | 142W |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Drain to Source Resistance | 230mR |
| Gate to Source Voltage (Vgs) | 30V |
| Continuous Drain Current (ID) | 16A |
| Drain to Source Voltage (Vdss) | 250V |
| Drain to Source Breakdown Voltage | 250V |
