FQP17N40
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N-Channel Power MOSFET, 400V, 16A, 270mR, TO-220
Дополнительная информация
N-channel Power MOSFET, QFET® series, featuring a 400V drain-source breakdown voltage and a continuous drain current of 16A. This through-hole component offers a maximum drain-source on-resistance of 270mΩ. Designed for high-power applications, it has a maximum power dissipation of 170W and operates within a temperature range of -55°C to 150°C. The TO-220AB package ensures robust mounting.
| RoHS | Compliant |
| Mount | Through Hole |
| Width | 4.7mm |
| Height | 9.4mm |
| Length | 10.1mm |
| Series | QFET® |
| Weight | 1.8g |
| Polarity | N-CHANNEL |
| Fall Time | 105ns |
| Lead Free | Lead Free |
| Packaging | Rail/Tube |
| Rds On Max | 270mR |
| Nominal Vgs | 5V |
| Package/Case | TO-220AB |
| Current Rating | 16A |
| RoHS Compliant | Yes |
| DC Rated Voltage | 400V |
| Package Quantity | 50 |
| Input Capacitance | 2.3nF |
| Power Dissipation | 170W |
| Threshold Voltage | 5V |
| Number of Channels | 1 |
| Number of Elements | 1 |
| Turn-On Delay Time | 40ns |
| Radiation Hardening | No |
| Turn-Off Delay Time | 90ns |
| Reach SVHC Compliant | No |
| Element Configuration | Single |
| Max Power Dissipation | 170W |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Drain to Source Resistance | 270mR |
| Gate to Source Voltage (Vgs) | 30V |
| Continuous Drain Current (ID) | 16A |
| Drain to Source Voltage (Vdss) | 400V |
| Drain-source On Resistance-Max | 270mR |
| Drain to Source Breakdown Voltage | 400V |
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