FQP30N06
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Краткое описание:
N-Channel Power MOSFET, 60V, 30A, 40mR, TO-220
Дополнительная информация
N-Channel Power MOSFET featuring 60V drain-source breakdown voltage and 30A continuous drain current. This component offers a low 40mΩ drain-source on-resistance and a maximum power dissipation of 79W. Designed for through-hole mounting in a TO-220AB package, it operates across a wide temperature range from -55°C to 175°C. Key electrical characteristics include a 4V threshold voltage, 945pF input capacitance, and fast switching times with turn-on delay of 10ns and fall time of 40ns.
| RoHS | Compliant |
| Mount | Through Hole |
| Width | 4.7mm |
| Height | 9.4mm |
| Length | 10.1mm |
| Series | PowerTrench®, SyncFET™ |
| Weight | 1.8g |
| Polarity | N-CHANNEL |
| Fall Time | 40ns |
| Lead Free | Lead Free |
| Packaging | Tape and Reel |
| Rds On Max | 40mR |
| Package/Case | TO-220AB |
| Current Rating | 30A |
| RoHS Compliant | Yes |
| DC Rated Voltage | 60V |
| Package Quantity | 50 |
| Input Capacitance | 945pF |
| Power Dissipation | 79W |
| Threshold Voltage | 4V |
| Number of Channels | 1 |
| Turn-On Delay Time | 10ns |
| Turn-Off Delay Time | 35ns |
| Reach SVHC Compliant | No |
| Element Configuration | Single |
| Max Power Dissipation | 79W |
| Max Operating Temperature | 175°C |
| Min Operating Temperature | -55°C |
| Drain to Source Resistance | 40mR |
| Gate to Source Voltage (Vgs) | 25V |
| Continuous Drain Current (ID) | 30A |
| Drain to Source Voltage (Vdss) | 60V |
| Drain-source On Resistance-Max | 40MR |
| Drain to Source Breakdown Voltage | 60V |
