FQP33N10
Производится
Увеличить
Краткое описание:
N-Channel Power MOSFET, 100V, 33A, 52mR, TO-220
Дополнительная информация
N-Channel Power MOSFET, QFET® series, featuring a 100V drain-source breakdown voltage and a continuous drain current of 33A. This through-hole component offers a low drain-source on-resistance of 52mΩ at a nominal gate-source voltage of 4V. Designed for high-power applications, it boasts a maximum power dissipation of 127W and operates across a wide temperature range from -55°C to 175°C. The TO-220AB package ensures robust thermal performance, with fast switching characteristics including a 15ns turn-on delay and 80ns turn-off delay.
| RoHS | Compliant |
| Mount | Through Hole |
| Width | 4.83mm |
| Height | 9.4mm |
| Length | 10.67mm |
| Series | QFET® |
| Weight | 1.8g |
| Polarity | N-CHANNEL |
| Fall Time | 110ns |
| Lead Free | Lead Free |
| Packaging | Rail/Tube |
| Rds On Max | 52mR |
| Nominal Vgs | 4V |
| Package/Case | TO-220AB |
| Current Rating | 33A |
| RoHS Compliant | Yes |
| DC Rated Voltage | 100V |
| Package Quantity | 50 |
| Input Capacitance | 1.5nF |
| Power Dissipation | 127W |
| Threshold Voltage | 4V |
| Number of Channels | 1 |
| Number of Elements | 1 |
| Turn-On Delay Time | 15ns |
| Dual Supply Voltage | 100V |
| Radiation Hardening | No |
| Turn-Off Delay Time | 80ns |
| Reach SVHC Compliant | No |
| Element Configuration | Single |
| Max Power Dissipation | 127W |
| Max Operating Temperature | 175°C |
| Min Operating Temperature | -55°C |
| Drain to Source Resistance | 52mR |
| Gate to Source Voltage (Vgs) | 25V |
| Continuous Drain Current (ID) | 33A |
| Drain to Source Voltage (Vdss) | 100V |
| Drain-source On Resistance-Max | 52mR |
| Drain to Source Breakdown Voltage | 100V |
Если у вас не открывается документ, нажмите, чтобы открыть файл в новой вкладке.
