FQP4N90
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Краткое описание:
900V N-CH MOSFET 4.2A TO-220 3.1R
Дополнительная информация
N-Channel Power MOSFET, 900V Drain-Source Breakdown Voltage, 4.2A Continuous Drain Current. Features 3.1 Ohm Drain-Source On-Resistance, 140W Max Power Dissipation, and TO-220-3 through-hole package. Operates from -55°C to 150°C with 30V Gate-Source Voltage rating. Includes 40ns fall time and 45ns turn-off delay time. RoHS compliant.
| RoHS | Compliant |
| Mount | Through Hole |
| Series | QFET® |
| Polarity | N-CHANNEL |
| Fall Time | 40ns |
| Lead Free | Lead Free |
| Packaging | Rail/Tube |
| Rds On Max | 3.3R |
| Resistance | 3.3R |
| Nominal Vgs | 5V |
| Package/Case | TO-220-3 |
| Current Rating | 4.2A |
| RoHS Compliant | Yes |
| DC Rated Voltage | 900V |
| Package Quantity | 50 |
| Input Capacitance | 1.1nF |
| Power Dissipation | 140W |
| Dual Supply Voltage | 900V |
| Turn-Off Delay Time | 45ns |
| Reach SVHC Compliant | No |
| Max Power Dissipation | 140W |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Drain to Source Resistance | 3.1R |
| Gate to Source Voltage (Vgs) | 30V |
| Continuous Drain Current (ID) | 4.2A |
| Drain to Source Voltage (Vdss) | 900V |
| Drain to Source Breakdown Voltage | 900V |
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