FQP50N06L
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Краткое описание:
N-Channel MOSFET, 60V, 52.4A, 21mR, TO-220, Logic Level
Дополнительная информация
N-channel Power MOSFET, QFET® series, featuring a 60V drain-source breakdown voltage and a continuous drain current of 52.4A. This logic-level MOSFET offers a low 21mΩ drain-source on-resistance and a maximum power dissipation of 121W. Packaged in a TO-220 through-hole mount, it operates from -55°C to 175°C and is RoHS compliant. Key switching characteristics include a 20ns turn-on delay and 145ns fall time.
| RoHS | Compliant |
| Mount | Through Hole |
| Width | 4.7mm |
| Height | 9.4mm |
| Length | 10.1mm |
| Series | QFET® |
| Weight | 1.8g |
| Polarity | N-CHANNEL |
| Fall Time | 145ns |
| Lead Free | Lead Free |
| Packaging | Rail/Tube |
| Rds On Max | 21mR |
| Package/Case | TO-220 |
| Current Rating | 52.4A |
| RoHS Compliant | Yes |
| DC Rated Voltage | 60V |
| Package Quantity | 50 |
| Input Capacitance | 1.63nF |
| Power Dissipation | 121W |
| Threshold Voltage | 2.5V |
| Number of Channels | 1 |
| Number of Elements | 1 |
| Turn-On Delay Time | 20ns |
| Radiation Hardening | No |
| Turn-Off Delay Time | 80ns |
| Reach SVHC Compliant | No |
| Element Configuration | Single |
| Max Power Dissipation | 121W |
| Max Operating Temperature | 175°C |
| Min Operating Temperature | -55°C |
| Drain to Source Resistance | 21mR |
| Gate to Source Voltage (Vgs) | 20V |
| Continuous Drain Current (ID) | 52.4A |
| Drain to Source Voltage (Vdss) | 60V |
| Drain-source On Resistance-Max | 21MR |
| Drain to Source Breakdown Voltage | 60V |
