FQP7P06
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P-Channel MOSFET, -60V, -7A, 410mR, TO-220
Дополнительная информация
P-channel Power MOSFET featuring a -60V drain-source breakdown voltage and a continuous drain current of 7A. This TO-220 packaged device offers a maximum on-resistance of 410mΩ at a nominal gate-source voltage of -4V. With a maximum power dissipation of 45W and an operating temperature range of -55°C to 175°C, it is suitable for through-hole mounting. Key switching characteristics include a turn-on delay time of 7ns and a fall time of 25ns.
| RoHS | Compliant |
| Mount | Through Hole |
| Width | 4.7mm |
| Height | 9.4mm |
| Length | 10.1mm |
| Series | QFET® |
| Weight | 1.8g |
| Polarity | P-CHANNEL |
| Fall Time | 25ns |
| Lead Free | Lead Free |
| Packaging | Rail/Tube |
| Rds On Max | 410mR |
| Nominal Vgs | -4V |
| Package/Case | TO-220 |
| Current Rating | -7A |
| RoHS Compliant | Yes |
| DC Rated Voltage | -60V |
| Package Quantity | 50 |
| Input Capacitance | 295pF |
| Power Dissipation | 45W |
| Threshold Voltage | -4V |
| Number of Channels | 1 |
| Turn-On Delay Time | 7ns |
| Dual Supply Voltage | -60V |
| Turn-Off Delay Time | 7.5ns |
| Reach SVHC Compliant | No |
| Element Configuration | Single |
| Max Power Dissipation | 45W |
| Max Operating Temperature | 175°C |
| Min Operating Temperature | -55°C |
| Drain to Source Resistance | 410mR |
| Gate to Source Voltage (Vgs) | 25V |
| Continuous Drain Current (ID) | 7A |
| Drain to Source Voltage (Vdss) | 60V |
| Drain-source On Resistance-Max | 410MR |
| Drain to Source Breakdown Voltage | -60V |
