FQP85N06
Производится
Увеличить
Краткое описание:
N-Channel MOSFET 60V 85A 10mR TO-220 Power Transistor
Дополнительная информация
N-Channel Power MOSFET, 60V Drain-Source Breakdown Voltage, 85A Continuous Drain Current, and 10mΩ Drain-Source On-Resistance. Features a TO-220AB through-hole package, 160W maximum power dissipation, and a maximum operating temperature of 175°C. Includes 4.12nF input capacitance and 175ns fall time. RoHS compliant and lead-free.
| RoHS | Compliant |
| Mount | Through Hole |
| Width | 4.7mm |
| Height | 9.4mm |
| Length | 10.1mm |
| Series | QFET® |
| Current | 85A |
| Voltage | 60V |
| Polarity | N-CHANNEL |
| Fall Time | 170ns |
| Lead Free | Lead Free |
| Packaging | Rail/Tube |
| Rds On Max | 10mR |
| Nominal Vgs | 4V |
| Package/Case | TO-220AB |
| Current Rating | 85A |
| RoHS Compliant | Yes |
| DC Rated Voltage | 60V |
| Package Quantity | 50 |
| Input Capacitance | 4.12nF |
| Power Dissipation | 160W |
| Threshold Voltage | 4V |
| Number of Channels | 1 |
| Number of Elements | 1 |
| Turn-On Delay Time | 40ns |
| Dual Supply Voltage | 60V |
| Turn-Off Delay Time | 175ns |
| Reach SVHC Compliant | No |
| Max Power Dissipation | 160W |
| Max Operating Temperature | 175°C |
| Min Operating Temperature | -55°C |
| Drain to Source Resistance | 10mR |
| Gate to Source Voltage (Vgs) | 25V |
| Continuous Drain Current (ID) | 85A |
| Drain to Source Voltage (Vdss) | 60V |
| Drain-source On Resistance-Max | 10MR |
| Drain to Source Breakdown Voltage | 60V |
