FQPF10N20C
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N-Channel MOSFET, 200V, 9.5A, 360mR, TO-220F
Дополнительная информация
N-Channel Power MOSFET, QFET® series, featuring 200V drain-to-source breakdown voltage and 9.5A continuous drain current. This single-element transistor offers a low 360mΩ drain-to-source resistance (Rds On Max) and a 4V threshold voltage. Designed for through-hole mounting in a TO-220-3 package, it operates within a -55°C to 150°C temperature range with a maximum power dissipation of 38W. Key switching characteristics include an 11ns turn-on delay and 72ns fall time.
| RoHS | Compliant |
| Mount | Through Hole |
| Width | 4.7mm |
| Height | 9.19mm |
| Length | 10.16mm |
| Series | QFET® |
| Weight | 2.27g |
| Polarity | N-CHANNEL |
| Fall Time | 72ns |
| Lead Free | Lead Free |
| Packaging | Rail/Tube |
| Rds On Max | 360mR |
| Package/Case | TO-220-3 |
| Current Rating | 9.5A |
| RoHS Compliant | Yes |
| DC Rated Voltage | 200V |
| Package Quantity | 50 |
| Input Capacitance | 510pF |
| Power Dissipation | 38W |
| Threshold Voltage | 4V |
| Number of Channels | 1 |
| Turn-On Delay Time | 11ns |
| Radiation Hardening | No |
| Turn-Off Delay Time | 70ns |
| Reach SVHC Compliant | No |
| Element Configuration | Single |
| Max Power Dissipation | 38W |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Drain to Source Resistance | 360mR |
| Gate to Source Voltage (Vgs) | 30V |
| Continuous Drain Current (ID) | 9.5A |
| Drain to Source Voltage (Vdss) | 200V |
| Drain to Source Breakdown Voltage | 200V |
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