FQPF12N60
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Краткое описание:
600V N-CH MOSFET 5.8A TO-220F
Дополнительная информация
N-channel MOSFET with 600V drain-source breakdown voltage and 5.8A continuous drain current. Features 700mΩ maximum drain-source on-resistance and 55W maximum power dissipation. Operates within a temperature range of -55°C to 150°C, with a gate-to-source voltage rating of 30V. Packaged in a TO-220-3 through-hole mount configuration, this RoHS compliant component offers fast switching speeds with turn-on delay of 30ns and turn-off delay of 95ns.
| RoHS | Compliant |
| Mount | Through Hole |
| Height | 19.5mm |
| Series | QFET® |
| Polarity | N-CHANNEL |
| Fall Time | 85ns |
| Lead Free | Lead Free |
| Packaging | Rail/Tube |
| Rds On Max | 700mR |
| Package/Case | TO-220-3 |
| Current Rating | 10.5A |
| RoHS Compliant | Yes |
| DC Rated Voltage | 600V |
| Package Quantity | 50 |
| Input Capacitance | 1.9nF |
| Power Dissipation | 55W |
| Number of Channels | 1 |
| Turn-On Delay Time | 30ns |
| Turn-Off Delay Time | 95ns |
| Max Power Dissipation | 55W |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Drain to Source Resistance | 700mR |
| Gate to Source Voltage (Vgs) | 30V |
| Continuous Drain Current (ID) | 5.8A |
| Drain to Source Voltage (Vdss) | 600V |
| Drain to Source Breakdown Voltage | 600V |
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