FQPF17N40T
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Краткое описание:
400V N-Channel Power MOSFET, 9.5A, 270mR, TO-220F
Дополнительная информация
N-Channel Power MOSFET, QFET® series, featuring a 400V drain-source breakdown voltage and a continuous drain current of 9.5A. This through-hole component offers a low drain-source on-resistance of 270mΩ and a maximum power dissipation of 56W. Designed for demanding applications, it operates within a temperature range of -55°C to 150°C and is supplied in a TO-220-3 package. RoHS compliant and lead-free, this MOSFET is ideal for power switching and amplification circuits.
| RoHS | Compliant |
| Mount | Through Hole |
| Series | QFET® |
| Weight | 2.27g |
| Polarity | N-CHANNEL |
| Fall Time | 105ns |
| Lead Free | Lead Free |
| Packaging | Rail/Tube |
| Rds On Max | 270mR |
| Package/Case | TO-220-3 |
| Current Rating | 16A |
| RoHS Compliant | Yes |
| DC Rated Voltage | 400V |
| Package Quantity | 50 |
| Input Capacitance | 2.3nF |
| Power Dissipation | 56W |
| Turn-On Delay Time | 40ns |
| Radiation Hardening | No |
| Turn-Off Delay Time | 90ns |
| Element Configuration | Single |
| Max Power Dissipation | 56W |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Drain to Source Resistance | 270mR |
| Gate to Source Voltage (Vgs) | 30V |
| Continuous Drain Current (ID) | 9.5A |
| Drain to Source Voltage (Vdss) | 400V |
| Drain to Source Breakdown Voltage | 400V |
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