FQPF19N20C
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Краткое описание:
N-Channel MOSFET, 200V, 19A, 170mR, TO-220F
Дополнительная информация
N-Channel Power MOSFET, QFET® series, featuring a 200V drain-source breakdown voltage and 19A continuous drain current. This through-hole component offers a low 170mΩ drain-source resistance (Rds On Max) and a maximum power dissipation of 43W. Operating across a wide temperature range from -55°C to 150°C, it is packaged in a TO-220F configuration and is RoHS compliant.
| RoHS | Compliant |
| Mount | Through Hole |
| Width | 4.7mm |
| Height | 9.19mm |
| Length | 10.16mm |
| Series | QFET® |
| Weight | 2.27g |
| Polarity | N-CHANNEL |
| Fall Time | 115ns |
| Lead Free | Lead Free |
| Packaging | Rail/Tube |
| Rds On Max | 170mR |
| Package/Case | TO-220-3 |
| Current Rating | 19A |
| RoHS Compliant | Yes |
| DC Rated Voltage | 200V |
| Package Quantity | 50 |
| Input Capacitance | 1.08nF |
| Power Dissipation | 43W |
| Turn-On Delay Time | 15ns |
| Radiation Hardening | No |
| Turn-Off Delay Time | 135ns |
| Element Configuration | Single |
| Max Power Dissipation | 43W |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Drain to Source Resistance | 170mR |
| Gate to Source Voltage (Vgs) | 30V |
| Continuous Drain Current (ID) | 19A |
| Drain to Source Voltage (Vdss) | 200V |
| Drain to Source Breakdown Voltage | 200V |
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