FQPF20N06
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Краткое описание:
N-Channel MOSFET, 60V, 15A, 60mR, TO-220F
Дополнительная информация
N-channel Power MOSFET featuring 60V drain-source breakdown voltage and 15A continuous drain current. This single-element transistor offers a low 60mΩ drain-source on-resistance. Designed for through-hole mounting in a TO-220-3 package, it operates across a wide temperature range from -55°C to 175°C with a maximum power dissipation of 30W. Key switching characteristics include a 5ns turn-on delay and 25ns fall time.
| RoHS | Compliant |
| Mount | Through Hole |
| Width | 4.9mm |
| Height | 16.07mm |
| Length | 10.36mm |
| Series | QFET® |
| Weight | 2.27g |
| Polarity | N-CHANNEL |
| Fall Time | 25ns |
| Lead Free | Lead Free |
| Packaging | Rail/Tube |
| Rds On Max | 60mR |
| Package/Case | TO-220-3 |
| Current Rating | 15A |
| RoHS Compliant | Yes |
| DC Rated Voltage | 60V |
| Input Capacitance | 590pF |
| Power Dissipation | 30W |
| Number of Elements | 1 |
| Turn-On Delay Time | 5ns |
| Radiation Hardening | No |
| Turn-Off Delay Time | 20ns |
| Element Configuration | Single |
| Max Power Dissipation | 30W |
| Max Operating Temperature | 175°C |
| Min Operating Temperature | -55°C |
| Drain to Source Resistance | 60mR |
| Gate to Source Voltage (Vgs) | 25V |
| Continuous Drain Current (ID) | 15A |
| Drain to Source Voltage (Vdss) | 60V |
| Drain to Source Breakdown Voltage | 60V |
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