FQPF2N60C
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Краткое описание:
600V 2A N-Channel MOSFET, 4.7 Ohm Rds(on), TO-220F
Дополнительная информация
N-Channel Power MOSFET featuring 600V drain-source breakdown voltage and 2A continuous drain current. This QFET® series component offers a low 4.7Ω drain-source on-resistance and 23W maximum power dissipation. Designed for through-hole mounting in a TO-220-3 package, it boasts fast switching speeds with turn-on delay of 9ns and fall time of 28ns. RoHS compliant and lead-free, it operates within a temperature range of -55°C to 150°C.
| RoHS | Compliant |
| Mount | Through Hole |
| Width | 4.7mm |
| Height | 9.19mm |
| Length | 10.16mm |
| Series | QFET® |
| Weight | 2.27g |
| Polarity | N-CHANNEL |
| Fall Time | 28ns |
| Lead Free | Lead Free |
| Packaging | Rail/Tube |
| Rds On Max | 4.7R |
| Package/Case | TO-220-3 |
| Current Rating | 2A |
| RoHS Compliant | Yes |
| DC Rated Voltage | 600V |
| Package Quantity | 50 |
| Input Capacitance | 235pF |
| Power Dissipation | 23W |
| Threshold Voltage | 4V |
| Turn-On Delay Time | 9ns |
| Radiation Hardening | No |
| Turn-Off Delay Time | 24ns |
| Reach SVHC Compliant | No |
| Element Configuration | Single |
| Max Power Dissipation | 23W |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Drain to Source Resistance | 4.7R |
| Gate to Source Voltage (Vgs) | 30V |
| Continuous Drain Current (ID) | 2A |
| Drain to Source Voltage (Vdss) | 600V |
| Drain-source On Resistance-Max | 4.7R |
| Drain to Source Breakdown Voltage | 600V |
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