FQPF30N06L
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Краткое описание:
60V N-Channel Logic Level Power MOSFET, 22.5A, 35mR, TO-220F
Дополнительная информация
N-Channel Power MOSFET, Logic Level, 60V Drain-Source Breakdown Voltage, 22.5A Continuous Drain Current, 35mΩ Max Drain-Source On-Resistance. Features a TO-220F package for through-hole mounting, 38W max power dissipation, and operates from -55°C to 175°C. Includes fast switching characteristics with 15ns turn-on delay and 60ns turn-off delay. RoHS compliant and lead-free.
| RoHS | Compliant |
| Mount | Through Hole |
| Width | 4.9mm |
| Height | 16.07mm |
| Length | 10.36mm |
| Series | QFET® |
| Weight | 2.27g |
| Polarity | N-CHANNEL |
| Fall Time | 110ns |
| Lead Free | Lead Free |
| Packaging | Rail/Tube |
| Rds On Max | 35mR |
| Package/Case | TO-220-3 |
| Current Rating | 22.5A |
| RoHS Compliant | Yes |
| DC Rated Voltage | 60V |
| Package Quantity | 50 |
| Input Capacitance | 1.04nF |
| Power Dissipation | 38W |
| Turn-On Delay Time | 15ns |
| Radiation Hardening | No |
| Turn-Off Delay Time | 60ns |
| Element Configuration | Single |
| Max Power Dissipation | 38W |
| Max Operating Temperature | 175°C |
| Min Operating Temperature | -55°C |
| Drain to Source Resistance | 35mR |
| Gate to Source Voltage (Vgs) | 20V |
| Continuous Drain Current (ID) | 22.5A |
| Drain to Source Voltage (Vdss) | 60V |
| Drain to Source Breakdown Voltage | 60V |
