FQPF3N25
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Краткое описание:
N-Channel MOSFET, 250V, 2.3A, 2.2 Ohm, TO-220F
Дополнительная информация
N-channel Power MOSFET featuring 250V drain-source breakdown voltage and 2.3A continuous drain current. This single-element transistor offers a low 2.2Ω drain-to-source resistance (Rds On Max) and 27W maximum power dissipation. Designed for through-hole mounting in a TO-220-3 package, it operates within a temperature range of -55°C to 150°C. Key switching characteristics include a 6.6ns turn-on delay and 5.5ns turn-off delay, with an input capacitance of 170pF.
| RoHS | Compliant |
| Mount | Through Hole |
| Height | 19.5mm |
| Series | QFET® |
| Weight | 2.27g |
| Polarity | N-CHANNEL |
| Fall Time | 20ns |
| Lead Free | Lead Free |
| Packaging | Rail/Tube |
| Rds On Max | 2.2R |
| Package/Case | TO-220-3 |
| Current Rating | 2.3A |
| RoHS Compliant | Yes |
| DC Rated Voltage | 250V |
| Package Quantity | 50 |
| Input Capacitance | 170pF |
| Power Dissipation | 27W |
| Number of Channels | 1 |
| Turn-On Delay Time | 6.6ns |
| Radiation Hardening | No |
| Turn-Off Delay Time | 5.5ns |
| Element Configuration | Single |
| Max Power Dissipation | 27W |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Drain to Source Resistance | 2.2R |
| Gate to Source Voltage (Vgs) | 30V |
| Continuous Drain Current (ID) | 2.3A |
| Drain to Source Voltage (Vdss) | 250V |
| Drain to Source Breakdown Voltage | 250V |
