FQPF47P06
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P-Channel MOSFET, -60V, -30A, 26mR, TO-220F
Дополнительная информация
P-channel Power MOSFET featuring a -60V drain-source breakdown voltage and a continuous drain current of 30A. This single-element transistor offers a low on-resistance of 26mΩ at a 10V gate-source voltage. Operating within a temperature range of -55°C to 175°C, it boasts a maximum power dissipation of 62W and is housed in a TO-220F package suitable for through-hole mounting. Key switching characteristics include a 50ns turn-on delay and a 195ns fall time, with an input capacitance of 3.6nF.
| RoHS | Compliant |
| Mount | Through Hole |
| Width | 4.7mm |
| Height | 9.19mm |
| Length | 10.16mm |
| Series | QFET® |
| Weight | 2.27g |
| Polarity | P-CHANNEL |
| Fall Time | 195ns |
| Lead Free | Lead Free |
| Packaging | Rail/Tube |
| Rds On Max | 26mR |
| Package/Case | TO-220-3 |
| Current Rating | -30A |
| RoHS Compliant | Yes |
| DC Rated Voltage | -60V |
| Package Quantity | 50 |
| Input Capacitance | 3.6nF |
| Power Dissipation | 62W |
| Number of Channels | 1 |
| Turn-On Delay Time | 50ns |
| Turn-Off Delay Time | 100ns |
| Element Configuration | Single |
| Max Power Dissipation | 62W |
| Max Operating Temperature | 175°C |
| Min Operating Temperature | -55°C |
| Drain to Source Resistance | 26mR |
| Gate to Source Voltage (Vgs) | 25V |
| Continuous Drain Current (ID) | 30A |
| Drain to Source Voltage (Vdss) | 60V |
| Drain to Source Breakdown Voltage | -60V |
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