FQPF4N90C
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Краткое описание:
900V N-Channel MOSFET, 4A, 4.2Ω, TO-220F
Дополнительная информация
N-channel Power MOSFET, QFET® series, featuring 900V drain-to-source breakdown voltage and 4A continuous drain current. This through-hole component offers a low 4.2Ω drain-to-source resistance (Rds On Max) and a maximum power dissipation of 47W. Designed for demanding applications, it operates within a temperature range of -55°C to 150°C and is packaged in a TO-220-3 configuration. Key switching characteristics include a 25ns turn-on delay and 35ns fall time, with a gate-to-source voltage rating of 30V.
| RoHS | Compliant |
| Mount | Through Hole |
| Width | 4.7mm |
| Height | 9.19mm |
| Length | 10.16mm |
| Series | QFET® |
| Weight | 2.27g |
| Polarity | N-CHANNEL |
| Fall Time | 35ns |
| Lead Free | Lead Free |
| Packaging | Rail/Tube |
| Rds On Max | 4.2R |
| Package/Case | TO-220-3 |
| Current Rating | 4A |
| RoHS Compliant | Yes |
| DC Rated Voltage | 900V |
| Package Quantity | 50 |
| Input Capacitance | 960pF |
| Power Dissipation | 47W |
| Threshold Voltage | 5V |
| Number of Channels | 1 |
| Turn-On Delay Time | 25ns |
| Turn-Off Delay Time | 40ns |
| Reach SVHC Compliant | No |
| Element Configuration | Single |
| Max Power Dissipation | 47W |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Drain to Source Resistance | 4.2R |
| Gate to Source Voltage (Vgs) | 30V |
| Continuous Drain Current (ID) | 4A |
| Drain to Source Voltage (Vdss) | 900V |
| Drain to Source Breakdown Voltage | 900V |
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