FQPF85N06
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N-Channel MOSFET, 60V, 53A, 10mR, TO-220F
Дополнительная информация
N-channel Power MOSFET featuring 60V drain-source breakdown voltage and a maximum continuous drain current of 53A. This QFET® series component offers a low drain-source on-resistance of 10mΩ. Designed for through-hole mounting in a TO-220-3 package, it operates within a temperature range of -55°C to 175°C with a maximum power dissipation of 62W. Key electrical characteristics include a 4V threshold voltage and a 4.12nF input capacitance.
| RoHS | Compliant |
| Mount | Through Hole |
| Width | 4.7mm |
| Height | 9.19mm |
| Length | 10.16mm |
| Series | QFET® |
| Weight | 2.27g |
| Polarity | N-CHANNEL |
| Fall Time | 170ns |
| Lead Free | Lead Free |
| Packaging | Rail/Tube |
| Rds On Max | 10mR |
| Nominal Vgs | 4V |
| Package/Case | TO-220-3 |
| Current Rating | 53A |
| RoHS Compliant | Yes |
| DC Rated Voltage | 60V |
| Package Quantity | 50 |
| Input Capacitance | 4.12nF |
| Power Dissipation | 62W |
| Threshold Voltage | 4V |
| Number of Elements | 1 |
| Turn-On Delay Time | 40ns |
| Dual Supply Voltage | 60V |
| Turn-Off Delay Time | 175ns |
| Reach SVHC Compliant | No |
| Element Configuration | Single |
| Max Power Dissipation | 62W |
| Max Operating Temperature | 175°C |
| Min Operating Temperature | -55°C |
| Drain to Source Resistance | 10mR |
| Gate to Source Voltage (Vgs) | 25V |
| Continuous Drain Current (ID) | 53A |
| Drain to Source Voltage (Vdss) | 60V |
| Drain-source On Resistance-Max | 10mR |
| Drain to Source Breakdown Voltage | 60V |
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