FQPF8N90C
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Краткое описание:
N-Channel MOSFET, 900V, 6.3A, 1.9 Ohm, TO-220F
Дополнительная информация
N-Channel Power MOSFET, QFET® series, featuring 900V drain-source breakdown voltage and 6.3A continuous drain current. This through-hole component offers a low 1.9Ω drain-source resistance (Rds On Max) and a maximum power dissipation of 60W. Designed with a TO-220-3 package, it operates within a temperature range of -55°C to 150°C and includes fast switching characteristics with a turn-off delay time of 70ns. RoHS compliant and lead-free.
| RoHS | Compliant |
| Mount | Through Hole |
| Height | 19.5mm |
| Series | QFET® |
| Weight | 2.27g |
| Polarity | N-CHANNEL |
| Fall Time | 70ns |
| Lead Free | Lead Free |
| Packaging | Rail/Tube |
| Rds On Max | 1.9R |
| Package/Case | TO-220-3 |
| Current Rating | 6.3A |
| RoHS Compliant | Yes |
| DC Rated Voltage | 900V |
| Package Quantity | 50 |
| Input Capacitance | 2.08nF |
| Power Dissipation | 60W |
| Number of Channels | 1 |
| Turn-On Delay Time | 40ns |
| Radiation Hardening | No |
| Turn-Off Delay Time | 70ns |
| Element Configuration | Single |
| Max Power Dissipation | 60W |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Drain to Source Resistance | 1.9R |
| Gate to Source Voltage (Vgs) | 30V |
| Continuous Drain Current (ID) | 6.3A |
| Drain to Source Voltage (Vdss) | 900V |
| Drain to Source Breakdown Voltage | 900V |
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