FQPF9N50CF
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N-Channel MOSFET, 500V, 9A, 850mR, TO-220F
Дополнительная информация
N-Channel Power MOSFET featuring FRFET® technology, designed for high-voltage applications with a 500V drain-to-source breakdown voltage. This single-element transistor offers a continuous drain current of 9A and a maximum drain-source on-resistance of 850mΩ. Packaged in a TO-220F configuration for through-hole mounting, it boasts a maximum power dissipation of 44W and operates within a temperature range of -55°C to 150°C. Key switching characteristics include a turn-on delay time of 18ns and a fall time of 64ns.
| RoHS | Compliant |
| Mount | Through Hole |
| Width | 4.9mm |
| Height | 16.07mm |
| Length | 10.36mm |
| Series | FRFET® |
| Weight | 2.27g |
| Polarity | N-CHANNEL |
| Fall Time | 64ns |
| Lead Free | Lead Free |
| Packaging | Rail/Tube |
| Rds On Max | 850mR |
| Package/Case | TO-220-3 |
| RoHS Compliant | Yes |
| Package Quantity | 50 |
| Input Capacitance | 1.03nF |
| Power Dissipation | 44W |
| Threshold Voltage | 4V |
| Number of Channels | 1 |
| Turn-On Delay Time | 18ns |
| Turn-Off Delay Time | 93ns |
| Reach SVHC Compliant | No |
| Element Configuration | Single |
| Max Power Dissipation | 44W |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Drain to Source Resistance | 850mR |
| Gate to Source Voltage (Vgs) | 30V |
| Continuous Drain Current (ID) | 9A |
| Drain to Source Voltage (Vdss) | 500V |
| Drain-source On Resistance-Max | 850MR |
| Drain to Source Breakdown Voltage | 500V |
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