FQS4901TF
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Краткое описание:
400V N-Ch MOSFET, 4.2Ω Rds(on), 450mA ID, SOIC N
Дополнительная информация
N-Channel MOSFET, 400V Drain-Source Breakdown Voltage, 450mA Continuous Drain Current, and 4.2Ω Max Drain-Source On-Resistance. This dual N-Channel MOSFET features a 4V Threshold Voltage, 25V Gate-to-Source Voltage, and 210pF Input Capacitance. Designed for surface mounting in an SOIC N package, it offers a 2W Max Power Dissipation and operates between -55°C and 150°C. The component includes fast switching characteristics with a 5ns Turn-On Delay and 20ns Turn-Off Delay, supplied in a 3000-piece tape and reel.
| RoHS | Compliant |
| Mount | Surface Mount |
| Series | QFET® |
| Weight | 0.2304g |
| FET Type | 2 N-Channel |
| Polarity | N-CHANNEL |
| Fall Time | 35ns |
| Lead Free | Lead Free |
| Packaging | Tape and Reel |
| Rds On Max | 4.2R |
| Package/Case | SOIC N |
| Current Rating | 450mA |
| RoHS Compliant | Yes |
| DC Rated Voltage | 400V |
| Package Quantity | 3000 |
| Input Capacitance | 210pF |
| Power Dissipation | 2W |
| Threshold Voltage | 4V |
| Number of Elements | 2 |
| Turn-On Delay Time | 5ns |
| Radiation Hardening | No |
| Turn-Off Delay Time | 20ns |
| Reach SVHC Compliant | No |
| Element Configuration | Dual |
| Max Power Dissipation | 2W |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Drain to Source Resistance | 11.2R |
| Gate to Source Voltage (Vgs) | 25V |
| Continuous Drain Current (ID) | 450mA |
| Drain to Source Voltage (Vdss) | 400V |
| Drain-source On Resistance-Max | 4.2R |
| Drain to Source Breakdown Voltage | 400V |
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