FQS4903TF
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Краткое описание:
500V N-Channel MOSFET, 370mA, 6.2 Ohm, SOIC, Tape & Reel
Дополнительная информация
N-Channel MOSFET, 500V Drain to Source Breakdown Voltage, 370mA Continuous Drain Current, 6.2 Ohm Drain to Source Resistance. Features include a 45ns fall time, 20ns turn-off delay, and 5.5ns turn-on delay. This surface mount device operates within a temperature range of -55°C to 150°C with a 2W maximum power dissipation. Supplied in a SOIC package on a 3000-piece tape and reel.
| RoHS | Compliant |
| Mount | Surface Mount |
| Series | QFET™ |
| Weight | 0.2304g |
| FET Type | 2 N-Channel |
| Polarity | N-CHANNEL |
| Fall Time | 45ns |
| Lead Free | Lead Free |
| Packaging | Tape and Reel |
| Rds On Max | 6.2R |
| Nominal Vgs | 4V |
| Package/Case | SOIC |
| Current Rating | 370mA |
| RoHS Compliant | Yes |
| DC Rated Voltage | 500V |
| Package Quantity | 3000 |
| Input Capacitance | 200pF |
| Power Dissipation | 2W |
| Number of Elements | 2 |
| Turn-On Delay Time | 5.5ns |
| Dual Supply Voltage | 500V |
| Radiation Hardening | No |
| Turn-Off Delay Time | 20ns |
| Reach SVHC Compliant | No |
| Element Configuration | Dual |
| Max Power Dissipation | 2W |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Drain to Source Resistance | 6.2R |
| Gate to Source Voltage (Vgs) | 25V |
| Continuous Drain Current (ID) | 370mA |
| Drain to Source Voltage (Vdss) | 500V |
| Drain to Source Breakdown Voltage | 500V |
