FQT13N06LTF
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Краткое описание:
N-Channel MOSFET, 60V, 2.8A, 110mR, SOT-223, Logic Level
Дополнительная информация
N-Channel Power MOSFET, logic-level, QFET™ series, featuring a 60V drain-source breakdown voltage and a continuous drain current of 2.8A. This single-element transistor offers a low drain-source on-resistance of 110mΩ. Packaged in a SOT-223 surface-mount case, it operates within a temperature range of -55°C to 150°C with a maximum power dissipation of 2.1W. Key switching characteristics include an 8ns turn-on delay and a 40ns fall time.
| RoHS | Compliant |
| Mount | Surface Mount |
| Width | 3.56mm |
| Height | 1.6mm |
| Length | 6.5mm |
| Series | QFET™ |
| Weight | 0.188g |
| Polarity | N-CHANNEL |
| Fall Time | 40ns |
| Lead Free | Lead Free |
| Packaging | Tape and Reel |
| Rds On Max | 110mR |
| Package/Case | SOT-223 |
| Current Rating | 2.8A |
| RoHS Compliant | Yes |
| DC Rated Voltage | 60V |
| Package Quantity | 1 |
| Input Capacitance | 350pF |
| Power Dissipation | 2.1W |
| Threshold Voltage | 2.5V |
| Number of Elements | 1 |
| Turn-On Delay Time | 8ns |
| Turn-Off Delay Time | 20ns |
| Reach SVHC Compliant | No |
| Element Configuration | Single |
| Max Power Dissipation | 2.1W |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Drain to Source Resistance | 110mR |
| Gate to Source Voltage (Vgs) | 20V |
| Continuous Drain Current (ID) | 2.8A |
| Drain to Source Voltage (Vdss) | 60V |
| Drain-source On Resistance-Max | 110mR |
| Drain to Source Breakdown Voltage | 60V |
