FQT4N20LTF
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N-Channel MOSFET, 200V, 850mA, 1.35R, SOT-223, Logic Level
Дополнительная информация
N-Channel Power MOSFET, Logic Level, QFET® series, featuring 200V drain-source breakdown voltage and 850mA continuous drain current. This single-element transistor offers a low 1.35Ω maximum drain-source on-resistance and a 2V threshold voltage, suitable for logic-level gate drive. Packaged in a SOT-223 surface-mount case, it operates within a temperature range of -55°C to 150°C with a maximum power dissipation of 2.2W. Fast switching characteristics include a 7ns turn-on delay and 40ns fall time.
| RoHS | Compliant |
| Mount | Surface Mount |
| Width | 3.56mm |
| Height | 1.6mm |
| Length | 6.5mm |
| Series | QFET™ |
| Weight | 0.188g |
| Polarity | N-CHANNEL |
| Fall Time | 40ns |
| Lead Free | Lead Free |
| Packaging | Tape and Reel |
| Rds On Max | 1.35R |
| Package/Case | SOT-223 |
| Current Rating | 850mA |
| RoHS Compliant | Yes |
| DC Rated Voltage | 200V |
| Package Quantity | 1 |
| Input Capacitance | 310pF |
| Power Dissipation | 2.2W |
| Threshold Voltage | 2V |
| Number of Elements | 1 |
| Turn-On Delay Time | 7ns |
| Turn-Off Delay Time | 15ns |
| Reach SVHC Compliant | No |
| Element Configuration | Single |
| Max Power Dissipation | 2.2W |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Drain to Source Resistance | 1.35R |
| Gate to Source Voltage (Vgs) | 20V |
| Continuous Drain Current (ID) | 850mA |
| Drain to Source Voltage (Vdss) | 200V |
| Drain-source On Resistance-Max | 1.35R |
| Drain to Source Breakdown Voltage | 200V |
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