FQU11P06TU
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Краткое описание:
P-Channel MOSFET -60V -9.4A 185mR TO-251
Дополнительная информация
P-channel Power MOSFET featuring a -60V drain-to-source breakdown voltage and a continuous drain current of 9.4A. This single-element transistor offers a low on-resistance of 185mΩ and is housed in a TO-251-3 (IPAK) package suitable for through-hole mounting. Operating within a temperature range of -55°C to 150°C, it boasts a maximum power dissipation of 2.5W and includes fast switching characteristics with turn-on delay times as low as 6.5ns.
| RoHS | Compliant |
| Mount | Through Hole |
| Width | 2.3mm |
| Height | 6.1mm |
| Length | 6.6mm |
| Series | QFET® |
| Weight | 0.34308g |
| Polarity | P-CHANNEL |
| Fall Time | 45ns |
| Lead Free | Lead Free |
| Packaging | Rail/Tube |
| Rds On Max | 185mR |
| Package/Case | TO-251-3 |
| Current Rating | -9.4A |
| RoHS Compliant | Yes |
| DC Rated Voltage | -60V |
| Package Quantity | 70 |
| Input Capacitance | 550pF |
| Power Dissipation | 2.5W |
| Threshold Voltage | -4V |
| Number of Elements | 1 |
| Turn-On Delay Time | 6.5ns |
| Radiation Hardening | No |
| Turn-Off Delay Time | 15ns |
| Reach SVHC Compliant | No |
| Element Configuration | Single |
| Max Power Dissipation | 2.5W |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Drain to Source Resistance | 185mR |
| Gate to Source Voltage (Vgs) | 30V |
| Continuous Drain Current (ID) | 9.4A |
| Drain to Source Voltage (Vdss) | -60V |
| Drain to Source Breakdown Voltage | -60V |
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