FQU13N10LTU
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N-Channel MOSFET, 100V, 10A, 180mR, Logic Level, IPAK
Дополнительная информация
N-Channel Power MOSFET, Logic Level, QFET® series, featuring 100V drain-source breakdown voltage and 10A continuous drain current. This component offers a low drain-source on-resistance of 180mΩ at a 10V gate-source voltage. Designed for through-hole mounting in a TO-251-3 (IPAK) package, it operates within a temperature range of -55°C to 150°C with a maximum power dissipation of 2.5W. Key switching characteristics include a 7.5ns turn-on delay and 22ns turn-off delay.
| RoHS | Compliant |
| Mount | Through Hole |
| Width | 2.3mm |
| Height | 6.1mm |
| Length | 6.6mm |
| Series | QFET® |
| Weight | 0.34308g |
| Polarity | N-CHANNEL |
| Fall Time | 72ns |
| Lead Free | Lead Free |
| Packaging | Rail/Tube |
| Rds On Max | 180mR |
| Package/Case | TO-251-3 |
| Current Rating | 10A |
| RoHS Compliant | Yes |
| DC Rated Voltage | 100V |
| Package Quantity | 70 |
| Input Capacitance | 520pF |
| Power Dissipation | 2.5W |
| Threshold Voltage | 2V |
| Number of Channels | 1 |
| Number of Elements | 1 |
| Turn-On Delay Time | 7.5ns |
| Radiation Hardening | No |
| Turn-Off Delay Time | 22ns |
| Reach SVHC Compliant | No |
| Element Configuration | Single |
| Max Power Dissipation | 2.5W |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Drain to Source Resistance | 180mR |
| Gate to Source Voltage (Vgs) | 20V |
| Continuous Drain Current (ID) | 10A |
| Drain to Source Voltage (Vdss) | 100V |
| Drain-source On Resistance-Max | 180MR |
| Drain to Source Breakdown Voltage | 100V |
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