FQU20N06LTU
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Краткое описание:
N-Channel MOSFET, 60V, 17.2A, 60mR, Logic Level, SOIC
Дополнительная информация
N-Channel Power MOSFET featuring 60V drain-source breakdown voltage and 17.2A continuous drain current. Offers a low 60mΩ maximum drain-source on-resistance at a 10V gate-source voltage. This logic-level MOSFET is housed in an IPAK package with through-hole mounting and a maximum power dissipation of 2.5W. Key switching characteristics include a 10ns turn-on delay and 35ns turn-off delay.
| RoHS | Compliant |
| Mount | Through Hole |
| Width | 2.3mm |
| Height | 6.1mm |
| Length | 6.6mm |
| Series | PowerTrench® |
| Weight | 0.34308g |
| Polarity | N-CHANNEL |
| Fall Time | 70ns |
| Lead Free | Lead Free |
| Packaging | Rail/Tube |
| Rds On Max | 60mR |
| Package/Case | SOIC |
| Current Rating | 17.2A |
| RoHS Compliant | Yes |
| DC Rated Voltage | 60V |
| Package Quantity | 70 |
| Input Capacitance | 630pF |
| Power Dissipation | 2.5W |
| Number of Channels | 1 |
| Number of Elements | 1 |
| Turn-On Delay Time | 10ns |
| Radiation Hardening | No |
| Turn-Off Delay Time | 35ns |
| Element Configuration | Single |
| Max Power Dissipation | 2.5W |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Drain to Source Resistance | 63mR |
| Gate to Source Voltage (Vgs) | 20V |
| Continuous Drain Current (ID) | 17.2A |
| Drain to Source Voltage (Vdss) | 60V |
| Drain-source On Resistance-Max | 60MR |
| Drain to Source Breakdown Voltage | 60V |
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