FS35R12W1T4BOMA1
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Краткое описание:
1200V 65A N-Ch IGBT Module
Дополнительная информация
N-channel Insulated Gate Bipolar Transistor (IGBT) module featuring a 1200V Collector-Emitter Breakdown Voltage and 65A Continuous Collector Current. This IGBT module offers a maximum power dissipation of 225W and a Collector-Emitter Saturation Voltage of 1.85V. Designed for chassis mounting with screw terminals, it operates within a temperature range of -40°C to 150°C and includes an integrated NTC thermistor. The module has a turn-on delay time of 25ns and a turn-off delay time of 240ns.
| RoHS | Compliant |
| Input | Standard |
| Mount | Chassis Mount, Screw |
| Width | 33.8mm |
| Height | 12mm |
| Length | 62.8mm |
| Lead Free | Contains Lead |
| Packaging | Bulk |
| Halogen Free | Not Halogen Free |
| Package/Case | Module |
| NTC Thermistor | Yes |
| RoHS Compliant | Yes |
| Package Quantity | 24 |
| Input Capacitance | 2nF |
| Power Dissipation | 225W |
| Turn-On Delay Time | 25ns |
| Turn-Off Delay Time | 240ns |
| Reach SVHC Compliant | No |
| Max Collector Current | 65A |
| Max Power Dissipation | 225W |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -40°C |
| Continuous Collector Current | 65A |
| Collector-emitter Voltage-Max | 2.25V |
| Collector Emitter Voltage (VCEO) | 1.2kV |
| Collector Emitter Breakdown Voltage | 1.2kV |
| Collector Emitter Saturation Voltage | 1.85V |
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