FZ600R12KE4HOSA1

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FZ600R12KE4HOSA1 - Infineon
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Краткое описание: IGBT 1.2kV 600A 3kW FLANGE MOUNT
Производитель Infineon
Статус производства Производится (ACTIVE)

Дополнительная информация

The FZ600R12KE4HOSA1 is a 1.2kV insulated gate bipolar transistor with a maximum collector current of 600A and a maximum power dissipation of 3kW. It is packaged in a flange mount configuration and is RoHS compliant. The transistor has a turn-on delay time of 240ns and a turn-off delay time of 610ns. It operates over a temperature range of -40°C to 125°C.
RoHS Compliant
Input Standard
Mount Chassis Mount, Screw
Height 36.5mm
Lead Free Lead Free
Packaging Tray
Halogen Free Not Halogen Free
Package/Case Module
NTC Thermistor No
RoHS Compliant Yes
Package Quantity 10
Input Capacitance 1.7nF
Power Dissipation 3kW
Turn-On Delay Time 240ns
Turn-Off Delay Time 610ns
Max Collector Current 600A
Max Power Dissipation 3kW
Max Operating Temperature 125°C
Min Operating Temperature -40°C
Continuous Collector Current 600A
Collector-emitter Voltage-Max 2.1V
Collector Emitter Breakdown Voltage 1.2kV
Collector Emitter Saturation Voltage 1.75V

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