FZT1047ATA
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NPN BJT Transistor, 5A I(C), 10V V(BR)CEO, SOT-223
Дополнительная информация
NPN silicon bipolar junction transistor (BJT) for surface mount applications. Features a continuous collector current of 5A, a collector-emitter breakdown voltage of 10V, and a maximum power dissipation of 2.5W. Operates with a gain bandwidth product of 150MHz and a collector-emitter saturation voltage of 350mV. Packaged in a 4-pin SOT-223, this RoHS compliant component offers a wide operating temperature range from -55°C to 150°C.
| RoHS | Compliant |
| Mount | Surface Mount |
| Width | 3.7mm |
| Height | 1.65mm |
| Length | 6.7mm |
| Weight | 0.000282oz |
| Current | 5A |
| Voltage | 25V |
| Polarity | NPN |
| Frequency | 150MHz |
| Lead Free | Lead Free |
| Packaging | Tape and Reel |
| Package/Case | SOT-223 |
| Max Frequency | 150MHz |
| Current Rating | 5A |
| RoHS Compliant | Yes |
| DC Rated Voltage | 10V |
| Package Quantity | 1 |
| Power Dissipation | 2.5W |
| Number of Elements | 1 |
| Transition Frequency | 150MHz |
| Max Breakdown Voltage | 10V |
| Max Collector Current | 5A |
| Max Power Dissipation | 2.5W |
| Gain Bandwidth Product | 150MHz |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Emitter Base Voltage (VEBO) | 5V |
| Continuous Collector Current | 5A |
| Collector Base Voltage (VCBO) | 35V |
| Collector-emitter Voltage-Max | 350mV |
| Collector Emitter Voltage (VCEO) | 10V |
| Collector Emitter Breakdown Voltage | 10V |
| Collector Emitter Saturation Voltage | 350mV |
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