FZT1053ATA
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NPN BJT Transistor, 75V Vceo, 4.5A Ic, SOT-223, 140MHz
Дополнительная информация
NPN Silicon Bipolar Junction Transistor (BJT) for surface mount applications. Features a continuous collector current of 4.5A and a collector-emitter breakdown voltage of 75V. Offers a minimum DC current gain (hFE) of 300 and a transition frequency of 140MHz. Packaged in a SOT-223 case with 4 pins, this RoHS compliant component operates from -55°C to 150°C with a maximum power dissipation of 2.5W.
| RoHS | Compliant |
| Mount | Surface Mount |
| Width | 3.7mm |
| Height | 1.65mm |
| Length | 6.7mm |
| Weight | 0.000282oz |
| hFE Min | 300 |
| Polarity | NPN |
| Lead Free | Lead Free |
| Packaging | Tape and Reel |
| Termination | SMD/SMT |
| Package/Case | SOT-223 |
| Max Frequency | 140MHz |
| Current Rating | 4.5A |
| RoHS Compliant | Yes |
| DC Rated Voltage | 75V |
| Package Quantity | 1 |
| Reach SVHC Compliant | No |
| Transition Frequency | 140MHz |
| Max Breakdown Voltage | 75V |
| Max Collector Current | 4.5A |
| Max Power Dissipation | 2.5W |
| Gain Bandwidth Product | 140MHz |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Emitter Base Voltage (VEBO) | 7V |
| Continuous Collector Current | 4.5A |
| Collector Base Voltage (VCBO) | 150V |
| Collector-emitter Voltage-Max | 440mV |
| Collector Emitter Voltage (VCEO) | 75V |
| Collector Emitter Breakdown Voltage | 75V |
| Collector Emitter Saturation Voltage | 440mV |
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