FZT1149ATA
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PNP BJT Transistor, 4A, 25V, 135MHz, SOT-223
Дополнительная информация
PNP Silicon Bipolar Junction Transistor (BJT) for surface mount applications. Features a continuous collector current of -4A, collector-emitter breakdown voltage of 25V, and a transition frequency of 135MHz. This 1-element transistor is housed in a SOT-223 package, offering a maximum power dissipation of 2.5W and operating temperature range of -55°C to 150°C. Compliant with RoHS and REACH SVHC standards.
| RoHS | Compliant |
| Mount | Surface Mount |
| Width | 3.7mm |
| Height | 1.65mm |
| Length | 6.7mm |
| Weight | 0.000282oz |
| Current | 4A |
| Voltage | 25V |
| Polarity | PNP |
| Frequency | 135MHz |
| Lead Free | Lead Free |
| Packaging | Tape and Reel |
| Package/Case | SOT-223 |
| Max Frequency | 135MHz |
| Current Rating | -4A |
| RoHS Compliant | Yes |
| DC Rated Voltage | -25V |
| Package Quantity | 1000 |
| Power Dissipation | 2.5W |
| Number of Elements | 1 |
| Reach SVHC Compliant | Yes |
| Transition Frequency | 135MHz |
| Max Breakdown Voltage | 25V |
| Max Collector Current | 4A |
| Max Power Dissipation | 2.5W |
| Gain Bandwidth Product | 135MHz |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Emitter Base Voltage (VEBO) | 5V |
| Continuous Collector Current | -4A |
| Collector Base Voltage (VCBO) | 30V |
| Collector-emitter Voltage-Max | 350mV |
| Collector Emitter Voltage (VCEO) | 25V |
| Collector Emitter Breakdown Voltage | 25V |
| Collector Emitter Saturation Voltage | -230mV |
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