FZT589TA
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PNP BJT Transistor, 1A I(C), 30V V(CE), 100MHz, SOT-223
Дополнительная информация
PNP Silicon Bipolar Junction Transistor, 1A continuous collector current, 30V collector-emitter breakdown voltage, and 50V collector-base voltage. Features a 100MHz transition frequency, 2W power dissipation, and a -650mV collector-emitter saturation voltage. Packaged in a SOT-223 surface mount case, this component operates from -55°C to 150°C and is lead-free and RoHS compliant.
| RoHS | Compliant |
| Mount | Surface Mount |
| Width | 3.7mm |
| Height | 1.65mm |
| Length | 6.7mm |
| Weight | 0.000282oz |
| Polarity | PNP |
| Frequency | 100MHz |
| Lead Free | Lead Free |
| Packaging | Tape and Reel |
| Package/Case | SOT-223 |
| Current Rating | -1A |
| RoHS Compliant | Yes |
| DC Rated Voltage | -30V |
| Package Quantity | 1000 |
| Power Dissipation | 2W |
| Number of Elements | 1 |
| Radiation Hardening | No |
| Reach SVHC Compliant | Yes |
| Transition Frequency | 100MHz |
| Max Breakdown Voltage | 30V |
| Max Collector Current | 1A |
| Max Power Dissipation | 2W |
| Gain Bandwidth Product | 100MHz |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Emitter Base Voltage (VEBO) | -5V |
| Continuous Collector Current | -1A |
| Collector Base Voltage (VCBO) | 50V |
| Collector-emitter Voltage-Max | 650mV |
| Collector Emitter Voltage (VCEO) | 30V |
| Collector Emitter Breakdown Voltage | 30V |
| Collector Emitter Saturation Voltage | -650mV |
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