FZT757TA
Увеличить
Краткое описание:
PNP BJT Transistor, 300V VCEO, 500mA IC, 30MHz, SOT-223
Дополнительная информация
PNP Silicon Bipolar Junction Transistor, surface mount in SOT-223 package. Features 300V Collector Emitter Breakdown Voltage (VCEO), 300V Collector Base Voltage (VCBO), and 500mA Max Collector Current (IC). Operates with a 30MHz Transition Frequency and -500mV Collector Emitter Saturation Voltage. Rated for 2W Power Dissipation and a temperature range of -55°C to 150°C. RoHS compliant and lead-free.
| RoHS | Compliant |
| Mount | Surface Mount |
| Width | 3.7mm |
| Height | 1.65mm |
| Length | 6.7mm |
| Weight | 0.000282oz |
| Polarity | PNP |
| Frequency | 30MHz |
| Lead Free | Lead Free |
| Packaging | Tape and Reel |
| Package/Case | SOT-223 |
| Max Frequency | 30MHz |
| Current Rating | -500mA |
| RoHS Compliant | Yes |
| DC Rated Voltage | -300V |
| Package Quantity | 1 |
| Power Dissipation | 2W |
| Number of Elements | 1 |
| Radiation Hardening | No |
| Reach SVHC Compliant | No |
| Transition Frequency | 30MHz |
| Max Breakdown Voltage | 300V |
| Max Collector Current | 500mA |
| Max Power Dissipation | 2W |
| Gain Bandwidth Product | 30MHz |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Emitter Base Voltage (VEBO) | -5V |
| Collector Base Voltage (VCBO) | 300V |
| Collector-emitter Voltage-Max | 500mV |
| Collector Emitter Voltage (VCEO) | 300V |
| Collector Emitter Breakdown Voltage | 300V |
| Collector Emitter Saturation Voltage | -500mV |
Если у вас не открывается документ, нажмите, чтобы открыть файл в новой вкладке.
