FZT758TA

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FZT758TA - Diodes
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Краткое описание: PNP BJT Transistor, 400V VCEO, 500mA IC, 50MHz, SOT-223
Производитель Diodes
Статус производства Производится (ACTIVE)

Дополнительная информация

PNP Silicon Bipolar Junction Transistor (BJT) for surface mount applications. Features a 400V Collector-Emitter Breakdown Voltage (VCEO) and a 400V Collector Base Voltage (VCBO). Offers a maximum collector current of 500mA and a transition frequency of 50MHz. Packaged in a SOT-223 case, this component supports a maximum power dissipation of 2W and operates within a temperature range of -55°C to 150°C. RoHS and REACH SVHC compliant.
RoHS Compliant
Mount Surface Mount
Width 3.7mm
Height 1.65mm
Length 6.7mm
Weight 0.000282oz
Polarity PNP
Frequency 50MHz
Lead Free Lead Free
Packaging Tape and Reel
Package/Case SOT-223
Max Frequency 50MHz
Current Rating -500mA
RoHS Compliant Yes
DC Rated Voltage -400V
Package Quantity 1000
Power Dissipation 2W
Number of Elements 1
Radiation Hardening No
Reach SVHC Compliant Yes
Transition Frequency 50MHz
Max Breakdown Voltage 400V
Max Collector Current 500mA
Max Power Dissipation 2W
Gain Bandwidth Product 50MHz
Max Operating Temperature 150°C
Min Operating Temperature -55°C
Emitter Base Voltage (VEBO) 5V
Collector Base Voltage (VCBO) 400V
Collector-emitter Voltage-Max 500mV
Collector Emitter Voltage (VCEO) 400V
Collector Emitter Breakdown Voltage 400V
Collector Emitter Saturation Voltage -500mV

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