FZT788BTA

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FZT788BTA - Diodes
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Краткое описание: PNP BJT Transistor, 3A I(C), 15V V(BR)CEO, SOT-223
Производитель Diodes
Статус производства Производится (ACTIVE)

Дополнительная информация

PNP Silicon Bipolar Junction Transistor (BJT) for surface mount applications. Features a maximum collector current of 3A and a collector-emitter breakdown voltage of 15V. Offers a collector-emitter saturation voltage of -500mV and a transition frequency of 100MHz. Packaged in a SOT-223 case, this component operates within a temperature range of -55°C to 150°C and supports a maximum power dissipation of 2W. RoHS and REACH SVHC compliant.
RoHS Compliant
Mount Surface Mount
Width 3.7mm
Height 1.65mm
Length 6.7mm
Weight 0.000282oz
Polarity PNP
Lead Free Lead Free
Packaging Tape and Reel
Package/Case SOT-223
Max Frequency 100MHz
Current Rating -3A
RoHS Compliant Yes
DC Rated Voltage -15V
Package Quantity 1
Radiation Hardening No
Reach SVHC Compliant Yes
Transition Frequency 100MHz
Max Breakdown Voltage 15V
Max Collector Current 3A
Max Power Dissipation 2W
Gain Bandwidth Product 100MHz
Max Operating Temperature 150°C
Min Operating Temperature -55°C
Emitter Base Voltage (VEBO) -5V
Collector Base Voltage (VCBO) 15V
Collector-emitter Voltage-Max 500mV
Collector Emitter Breakdown Voltage 15V
Collector Emitter Saturation Voltage -500mV

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