FZT792ATA

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FZT792ATA - Diodes
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Краткое описание: PNP BJT Transistor, 70V VCEO, 2A IC, 160MHz, SOT-223
Производитель Diodes
Статус производства Производится (ACTIVE)

Дополнительная информация

PNP Silicon Bipolar Junction Transistor for surface mount applications. Features a 70V collector-emitter breakdown voltage and a maximum collector current of 2A. Offers a typical collector-emitter saturation voltage of -300mV and a gain bandwidth product of 160MHz. Packaged in a SOT-223 case, this component operates within a temperature range of -55°C to 150°C and has a maximum power dissipation of 2W.
RoHS Compliant
Mount Surface Mount
Width 3.7mm
Height 1.65mm
Length 6.7mm
Weight 0.000282oz
Polarity PNP
Frequency 160MHz
Lead Free Lead Free
Packaging Tape and Reel
Package/Case SOT-223
Max Frequency 160MHz
Current Rating -2A
RoHS Compliant Yes
DC Rated Voltage -70V
Package Quantity 1
Power Dissipation 2W
Number of Elements 1
Radiation Hardening No
Reach SVHC Compliant No
Transition Frequency 160MHz
Max Breakdown Voltage 70V
Max Collector Current 2A
Max Power Dissipation 2W
Gain Bandwidth Product 160MHz
Max Operating Temperature 150°C
Min Operating Temperature -55°C
Emitter Base Voltage (VEBO) 5V
Collector Base Voltage (VCBO) 75V
Collector-emitter Voltage-Max 500mV
Collector Emitter Voltage (VCEO) 70V
Collector Emitter Breakdown Voltage 70V
Collector Emitter Saturation Voltage -300mV