FZT955TA

FZT955TA - Diodes
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Краткое описание: PNP BJT Transistor, 140V VCEO, 4A IC, 110MHz, SOT-223
Производитель Diodes

Дополнительная информация

PNP Silicon Bipolar Junction Transistor, surface mountable in a SOT-223 package. Features a continuous collector current of -4A, collector-emitter breakdown voltage of 140V, and a transition frequency of 110MHz. Offers a maximum power dissipation of 3W and operates within a temperature range of -55°C to 150°C. This component is RoHS and REACH SVHC compliant.
RoHS Compliant
Mount Surface Mount
Width 3.7mm
Height 1.65mm
Length 6.7mm
Weight 0.000282oz
Polarity PNP
Frequency 110MHz
Lead Free Lead Free
Packaging Tape and Reel
Package/Case SOT-223
Max Frequency 110MHz
Current Rating -4A
RoHS Compliant Yes
DC Rated Voltage -140V
Package Quantity 1000
Power Dissipation 3W
Number of Elements 1
Radiation Hardening No
Reach SVHC Compliant Yes
Transition Frequency 110MHz
Max Breakdown Voltage 140V
Max Collector Current 4A
Max Power Dissipation 3W
Gain Bandwidth Product 110MHz
Max Operating Temperature 150°C
Min Operating Temperature -55°C
Emitter Base Voltage (VEBO) 6V
Continuous Collector Current -4A
Collector Base Voltage (VCBO) 180V
Collector-emitter Voltage-Max 370mV
Collector Emitter Voltage (VCEO) 140V
Collector Emitter Breakdown Voltage 140V
Collector Emitter Saturation Voltage -370mV

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