FZT956TA
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PNP BJT Transistor, 200V, 2A, 110MHz, SOT-223
Дополнительная информация
PNP Silicon Bipolar Junction Transistor, surface mountable in a SOT-223 package. Features a 200V Collector-Emitter Breakdown Voltage (VCEO) and a 2A Continuous Collector Current (IC). Offers a 110MHz Gain Bandwidth Product (fT) and a maximum power dissipation of 3W. Operates within a temperature range of -55°C to 150°C. This component is RoHS and REACH SVHC compliant.
| RoHS | Compliant |
| Mount | Surface Mount |
| Width | 3.7mm |
| Height | 1.65mm |
| Length | 6.7mm |
| Weight | 0.000282oz |
| Polarity | PNP |
| Frequency | 110MHz |
| Lead Free | Lead Free |
| Packaging | Tape and Reel |
| Package/Case | SOT-223 |
| Max Frequency | 110MHz |
| Current Rating | -2A |
| RoHS Compliant | Yes |
| DC Rated Voltage | -200V |
| Package Quantity | 1 |
| Power Dissipation | 3W |
| Number of Elements | 1 |
| Radiation Hardening | No |
| Reach SVHC Compliant | Yes |
| Transition Frequency | 110MHz |
| Max Breakdown Voltage | 200V |
| Max Collector Current | 2A |
| Max Power Dissipation | 3W |
| Gain Bandwidth Product | 110MHz |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Emitter Base Voltage (VEBO) | 6V |
| Continuous Collector Current | -2A |
| Collector Base Voltage (VCBO) | 220V |
| Collector-emitter Voltage-Max | 370mV |
| Collector Emitter Voltage (VCEO) | 200V |
| Collector Emitter Breakdown Voltage | 200V |
| Collector Emitter Saturation Voltage | -275mV |
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