FZT957TA

FZT957TA - Diodes
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Краткое описание: PNP BJT Transistor, 300V VCEO, 1A IC, 85MHz, SOT-223
Производитель Diodes

Дополнительная информация

PNP Silicon Bipolar Junction Transistor (BJT) for surface mount applications. Features a 300V collector-emitter breakdown voltage (VCEO) and a continuous collector current rating of -1A. Offers a maximum power dissipation of 3W and a transition frequency of 85MHz. Packaged in SOT-223, this component is lead-free, RoHS compliant, and REACH SVHC compliant.
RoHS Compliant
Mount Surface Mount
Width 3.7mm
Height 1.65mm
Length 6.7mm
Weight 0.000282oz
Polarity PNP
Frequency 85MHz
Lead Free Lead Free
Packaging Tape and Reel
Package/Case SOT-223
Max Frequency 85MHz
Current Rating -1A
RoHS Compliant Yes
DC Rated Voltage -300V
Package Quantity 1000
Power Dissipation 3W
Number of Elements 1
Radiation Hardening No
Reach SVHC Compliant Yes
Transition Frequency 85MHz
Max Breakdown Voltage 300V
Max Collector Current 1A
Max Power Dissipation 3W
Gain Bandwidth Product 85MHz
Max Operating Temperature 150°C
Min Operating Temperature -55°C
Emitter Base Voltage (VEBO) 6V
Continuous Collector Current -1A
Collector Base Voltage (VCBO) 300V
Collector-emitter Voltage-Max 240mV
Collector Emitter Voltage (VCEO) 300V
Collector Emitter Breakdown Voltage 300V
Collector Emitter Saturation Voltage -170mV

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