G2R50MT33K
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Краткое описание:
3300V 50mΩ SiC MOSFET N-Channel Enhancement Mode
Дополнительная информация
The G2R50MT33K is a 3300V, 50mΩ Silicon Carbide (SiC) MOSFET utilizing G2R technology. It features low capacitances, a fast and reliable body diode, and is designed for high-frequency switching with improved thermal capability and ease of paralleling without thermal runaway. It includes a separate Kelvin Source pin for improved gate drive performance.
| RoHS | Compliant |
| REACH | Compliant |
| Drain-Source Voltage (Vds) | 3300V |
| Operating Temperature (Tj) | -55 to 175°C |
| Thermal Resistance (RthJC) | 0.21°C/W |
| Gate-Source Voltage (Static) | -5 / +20V |
| Power Dissipation (Pd) at 25°C | 536W |
| Pulsed Drain Current (Id,pulse) | 235A |
| Continuous Drain Current (Id) at 25°C | 64A |
| Continuous Drain Current (Id) at 100°C | 45A |
| Drain-Source On-State Resistance (Rds(on)) | 50mΩ |
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